0000-0003-0029-3993
Inclusion DOES Matter: COVID-19 as an opportunity (not a near miss) for making decisive changes in UK STEMM academia
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Microwave plasma modelling for thick diamond deposition on III-nitrides
Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature
Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger–Meitner recombination
Atomic scale observation of threading dislocations in α-Ga2O3
Tribological manufacturing of ZDDP tribofilms functionalised by graphene nanoplatelets
Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well
Microscopy studies of InGaN MQWs overgrown on porosified InGaN superlattice pseudo-substrates
Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN
Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates
Characterisation of the interplay between microstructure and opto-electronic properties of Cu(In,Ga)S2 solar cells by using correlative CL-EBSD measurements
Enhanced Excitonic Nature of MAPbBr3 Nanocrystals in Nanoporous GaN
Room temperature quantum emitters in aluminum nitride epilayers on silicon
Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
Mapping emission heterogeneity in layered halide perovskites using cathodoluminescence
Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation
Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers
GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft
Role of nanoscale compositional inhomogeneities in limiting the open circuit voltage in Cu(In,Ga)S2 solar cells
Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry
Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells
Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity
Ni/Au contacts to corundum α-Ga2O3
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD
Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy
Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes
Cubic GaN and InGaN/GaN quantum wells
Radiation effects in ultra-thin GaAs solar cells
Dismantling barriers faced by women in STEM
Optical emission from focused ion beam milled halide perovskite device cross‐sections
Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN
Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers
Defect characterization of {101¯3} GaN by electron microscopy
Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum Dot
Multimicroscopy of cross-section zincblende GaN LED heterostructure
The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers
Pure single-photon emission from an InGaN/GaN quantum dot
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
Gender issues in fundamental physics: Strumia’s bibliometric analysis fails to account for key confounders and confuses correlation with causation
Thermal stress modelling of diamond on GaN/III-Nitride membranes
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
Racism, equity and inclusion in research funding
Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond
Alloy segregation at stacking faults in zincblende GaN heterostructures
Porous nitride semiconductors reviewed
Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
Non-polar nitride single-photon sources
The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence
Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching
GaN-on-diamond technology platform: Bonding-free membrane manufacturing process
Let’s fix the system, not the scientists
Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction
A Review of Barriers Women Face in Research Funding Processes in the UK
Effects of microstructure and growth conditions on quantum emitters in gallium nitride
Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates
Spectral diffusion time scales in InGaN/GaN quantum dots
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM
Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN
What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Improvement of single photon emission from InGaN QDs embedded in porous micropillars
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure
Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
Temperature-dependent fine structure splitting in InGaN quantum dots
Carrier localization in the vicinity of dislocations in InGaN
Defects in III-nitride microdisk cavities
Evolution of the m-Plane quantum well morphology and composition within a GaN/InGaN core-shell structure
Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
Photoluminescence studies of cubic GaN epilayers
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Validity of Vegard's rule for Al<inf>1-x</inf>In<inf>x</inf>N (0.08 < x < 0.28) thin films grown on GaN templates
Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface
Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs
Atom probe tomography of nitride semiconductors
Critical assessment 23: Gallium nitride-based visible light-emitting diodes
Dielectric response of wurtzite gallium nitride in the terahertz frequency range
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
Growth of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1−x</inf>N layers by molecular beam epitaxy using a highly efficient RF plasma source
Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy
Molecular beam epitaxy of free-standing bulk wurtzite Al<inf>x</inf>Ga<inf>1-x</inf>N layers using a highly efficient RF plasma source
Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
Nanocomposites of TiO<inf>2</inf>/cyanoethylated cellulose with ultra high dielectric constants
Nitride quantum light sources
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers
Structural and optical properties of (1122) InGaN quantum wells compared to (0001) and (1120)
Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy
The microstructure of non-polar a-plane (11 2 0) InGaN quantum wells
Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates
Ultra-low threshold gallium nitride photonic crystal nanobeam laser
Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization
Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures
Carrier distributions in InGaN/GaN light-emitting diodes
Difference in linear polarization of biaxially strained i nx G a1-x N alloys on nonpolar a -plane and m -plane GaN
Effect of threading dislocations on the quality factor of InGaN/GaN microdisk cavities
Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy
Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
Low-Temperature Growth of Carbon Nanotube Forests Consisting of Tubes with Narrow Inner Spacing Using Co/Al/Mo Catalyst on Conductive Supports
Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
Optical studies of non-polar m-plane (11-00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN
Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials
SCM and SIMS investigations of unintentional doping in III-nitrides
Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
An investigation into defect reduction techniques for growth of non-polar GaN on sapphire
Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN
Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities
Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures
Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures
Electron channeling contrast imaging of defects in III-nitride semiconductors
Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime
High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics
Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy
Observations of Rabi oscillations in a non-polar InGaN quantum dot
Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells
The impact of growth parameters on trench defects in InGaN/GaN quantum wells
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the "green gap" problem
Transfer printed multi-color integrated devices for visible light communication applications
Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction
Carrier density dependent localization and consequences for efficiency droop in InGaN/GaN quantum well structures
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
Defect reduction in semi-polar (11-22) gallium nitride grown using epitaxial lateral overgrowth
Erratum: Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction (Journal of Applied Physics (2013) 114 (053520))
Erratum: Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports (Applied Physics Letters (2013) 103 (073116))
Evidence for dark states in the temperature dependent recombination dynamics of InGaN/GaN quantum wells
Fundamentals of X-ray diffraction characterisation of strain in GaN based compounds
Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports
Low threshold, room-temperature microdisk lasers in the blue spectral range
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
Origins of spectral diffusion in the micro-photoluminescence of single InGaN quantum dots
Properties of trench defects in InGaN/GaN quantum well structures
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
Towards a better understanding of trench defects in InGaN/GaN quantum wells
A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity
Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
Growth and optical characterisation of multilayers of InGaN quantum dots
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
The negligible effects of miscut on indium aluminium nitride growth
Unintentional doping in GaN
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
Atom probe tomography assessment of the impact of electron beam exposure on In<inf>x</inf>Ga<inf>1-x</inf>N/GaN quantum wells
Carrier dynamics of In<inf>x</inf>Ga<inf>1-x</inf>N quantum disks embedded in GaN nanocolumns
Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities
Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks
In-situ study of growth of carbon nanotube forests on conductive CoSi <inf>2</inf> support
InGaN super-lattice growth for fabrication of quantum dot containing microdisks
Optical studies on In<inf>x</inf>Ga<inf>1-x</inf>N quantum disks
Response to Comment on the effects of Si doping on dislocation movement and tensile stress in GaN films' [J. Appl. Phys. 109, 073509 (2011)]
Support-catalyst-gas interactions during carbon nanotube growth on metallic Ta films
The effects of Si doping on dislocation movement and tensile stress in GaN films
The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy
The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy
AFM observation of diamond indenters after oxidation at elevated temperatures
Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire
Atom probe extended to AlGaN: Three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice
Cavity Enhancement of single quantum dot emission in the blue
Characterization of unintentional doping in nonpolar GaN
Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a-plane GaN
Energy landscape and carrier wave-functions in InGaN/GaN quantum wells
Imaging dislocations in gallium nitride across broad areas using atomic force microscopy
Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors
Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS
Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity
Microstructural origins of localization in InGaN quantum wells
Microstructural, optical, and electrical characterization of semipolar (11 2- 2) gallium nitride grown by epitaxial lateral overgrowth
Q-factor measurements on planar nitride cavities
Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy
Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth
The effect of annealing on the surface morphology of strained and unstrained In<inf>x</inf>Al<inf>1-x</inf>N thin films
The effects of annealing on non-polar (1 1 2̄ 0) a-plane GaN films
The impact of ScOxNy interlayers on unintentional doping and threading dislocations in GaN
The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials
The use of spatial analysis techniques in defect and nanostructure studies
Atom probe tomography studies of gan-based semiconductor materials
Erratum: Surface terracing on ferritic stainless-steel fibres and potential relevance to in vitro cell growth (Philosophical (2009) Magazine 89:26 (2285-2303))
Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images
Nitride-based quantum dots for single photon source applications
Non-linear excitation and correlation studies of single InGaN quantum dots
Optimisation of GaN overgrowth of InAlN for DBRs
Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN
Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN
Surface terracing on ferritic stainless-steel fibres and potential relevance to in vitro cell growth
The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1-xN epitaxial layers
The influence of coalescence time on unintentional doping in GaN/sapphire
The spatial distribution of threading dislocations in gallium nitride films
Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot
Advances in AFM for the electrical characterization of semiconductors
Assessment of scanning spreading resistance microscopy for application to n-type GaN
Assessment of the performance of scanning capacitance microscopy for n -type gallium nitride
Atom probe reveals the structure of InxGa1-xN based quantum wells in three dimensions
Compositional inhomogeneity of a high-efficiency Inx Ga1-x N based multiple quantum well ultraviolet emitter studied by three dimensional atom probe
Electrically driven single InGaN/GaN quantum dot emission
Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field
Gross well-width fluctuations in InGaN quantum wells
Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems
Insights into the growth mechanism of InxGa1-xN epitaxial nanostructures formed using a silane predose
The origin and reduction of dislocations in Gallium Nitride
The role of strain in controlling the surface morphology of Al<inf>x</inf>Ga<inf>1-x</inf>N following in situ treatment with SiH<inf>4</inf> and NH<inf>3</inf>
Three-dimensional atom probe analysis of green- and blue-emitting In <inf>x</inf> Ga<inf>1-x</inf> NGaN multiple quantum well structures
Unintentional doping in GaN assessed by scanning capacitance microscopy
Anisotropic strain relaxation in a-plane GaN quantum dots
Atom probe tomography today
Cavity-enhanced blue single-photon emission from a single InGaNGaN quantum dot
Characterization of InGaN quantum wells with gross fluctuations in width
Compositional contrast in Al<inf>x</inf>Ga<inf>1-x</inf>N/GaN heterostructures using scanning spreading resistance microscopy
Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
Intentional and unintentional localization in InGaN
Materials challenges for devices based on single, self-assembled InGaN quantum dots
Optical studies of non-linear absorption in single InGaN/GaN quantum dots
Practical issues in carrier-contrast imaging of GaN structures
Preparation of InAs(0 0 1) surface for spin injection via a chemical route
Progress in the optical studies of single InGaN/GaN quantum dots
Response to "comment on 'Three-dimensional atom probe studies of an Inx Ga1-x NGaN multiple quantum well structure: Assessment of possible indium clustering'" [Appl. Phys. Lett. 91, 176101 (2007)]
Role of gross well-width fluctuations in bright, green-emitting single InGaNGaN quantum well structures
Threading dislocation reduction in (0 0 01) GaN thin films using SiN<inf>x</inf> interlayers
Three-dimensional atom probe studies of an InxGa 1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH<inf>4</inf> and NH<inf>3</inf>
Insights into the origin of threading dislocations in GaN/Al 2O3 from atomic force microscopy
The effect of Si on the growth mode of GaN
Three methods for the growth of InGaN nanostructures by MOVPE
Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE
Two-photon absorption from single InGaN/GaN quantum dots
Growth modes in heteroepitaxy of InGaN on GaN
Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
Simulation of the quantum-confined stark effect in a single InGaN quantum dot
Time-resolved dynamics in single InGaN quantum dots
Dynamics of single InGaN quantum dots
InGaN quantum dots grown by MOVPE via a droplet epitaxy route
Nucleation and growth of GaN/AIN quantum dots
Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots
Temporal variation in photoluminescence from single InGaN quantum dots
The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy
Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
Nanoscale solid-state quantum computing
Putting nanocrystals to work: From solutions to devices
Selective nucleation and controlled growth: Quantum dots on metal, insulator and semiconductor surfaces
The effect of V:III ratio on the growth of InN nanostructures by molecular beam epitaxy
Growth and characterisation of nitride nanostructures
Heteroepitaxial growth of InN islands studied by STM and AFM
Stranski-Krastanov growth of InN nanostructures of GaN studied by RHEED, STM and AFM
Transcript analysis of 1003 novel yeast genes using high-throughput northern hybridizations
0000-0003-0029-3993
