Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source
- S.V. Novikov
- , C.R. Staddon
- , S.-L. Sahonta
- , R.A. Oliver
- , C.J. Humphreys
- , C.T. Foxon
No endorsements
This article has not been endorsed yet.
Like this work?
Let others know. Sign in to add your endorsement.