Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
- F. C.-P. Massabuau
- , L. Trinh-Xuan
- , D. Lodié
- , E. J. Thrush
- , D. Zhu
- , F. Oehler
- , T. Zhu
- , M. J. Kappers
- , C. J. Humphreys
- , R. A. Oliver
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