Towards a better understanding of trench defects in InGaN/GaN quantum wells
- F C-P Massabuau
- , L Trinh-Xuan
- , D Lodié
- , S-L Sahonta
- , S Rhode
- , E J Thrush
- , F Oehler
- , M J Kappers
- , C J Humphreys
- , R A Oliver
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