A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
- M. J. Davies
- , S. Hammersley
- , F. C.-P. Massabuau
- , P. Dawson
- , R. A. Oliver
- , M. J. Kappers
- , C. J. Humphreys
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