Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth
- Tongtong Zhu
- , Danny Sutherland
- , Tom J. Badcock
- , Rui Hao
- , Michelle A. Moram
- , Philip Dawson
- , Menno J. Kappers
- , Rachel A. Oliver
No endorsements
This article has not been endorsed yet.
Like this work?
Let others know. Sign in to add your endorsement.