Properties of trench defects in InGaN/GaN quantum well structures
- S.‐L. Sahonta
- , M. J. Kappers
- , D. Zhu
- , T. J. Puchtler
- , T. Zhu
- , S. E. Bennett
- , C. J. Humphreys
- , R. A. Oliver
No endorsements
This article has not been endorsed yet.
Like this work?
Let others know. Sign in to add your endorsement.