The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
- S. Hammersley
- , D. Watson-Parris
- , P. Dawson
- , M. J. Godfrey
- , T. J. Badcock
- , M. J. Kappers
- , C. McAleese
- , R. A. Oliver
- , C. J. Humphreys
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